1 p-channel 30-v (d-s) mosfet fea t ures ? haloge n-free ?t renchfet ? p ower mosfet ? 100% r g tested ? 100 % uis tested application s ? notebo ok ba ttery charging ? notebook adapter switch p r oduct summary v ds (v) r ds(on) ( )i d (a ) q g (t yp.) - 30 0.043 at v gs = - 10 v - 1 5 d 22 nc 0.070 at v gs = - 4. 5 v - 1 5 d notes: a. surface mounted on 1" x 1" f r4 board. b. t = 10 s. c. maximum under steady state conditions is 81 c/w. d. package limited. absolute maximum ratings t a = 2 5 c, unless otherwise noted pa ram e ter symbol li mit un it d rain-source voltage v ds - 30 v gate-source v oltage v gs 25 contin uou s drain current (t j = 150 c) t c = 25 c i d - 15 d a t c = 70 c - 15 d t a = 25 c - 10 .6 a, b t a = 70 c - 8. 6 a, b pulsed drain current i dm - 50 contin uou s source-drain diode current t c = 25 c i s - 15 d t a = 25 c - 3. 0 a, b a v alanche current l = 0. 1 mh i as - 20 single-pulse a v alanche energy e as 20 mj ma x imum power dissipation t c = 25 c p d 52 w t c = 70 c 33 t a = 25 c 3.7 a, b t a = 70 c 2.4 a, b operat ing j unction and storage temperature range t j , t stg - 55 to 150 c solder ing r ecommendations (peak temperature) 260 th e rmal resistance ratings p arameter symbol t ypic al maximum unit ma ximum junction-to-ambient t 10 s r thj a 26 33 c/w ma xim um junction-to-case steady state r th jc 1.9 2 . 4 s g d p-channel mosfet rohs compliant to-251 s d g top view www.din-tek.jp dtl 15 p 03
2 no t e s: a. p ulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not s ubject to production testing. stresses b eyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. s pecifications t j = 25 c, unless otherwise noted p arame ter symb ol t est co nditions min. typ. max. un it static drain-source breakdown v oltage v ds v gs = 0 v , i d = - 250 a - 30 v v ds temper ature coefficient ' v ds /t j i d = - 250 a - 31 mv/c v gs(t h) temperature co efficient ' v gs(th) /t j 5.5 gate-s ource threshold voltage v gs(t h) v ds = v gs , i d = - 250 a - 1.0 - 3.0 v gate-source leakage i gss v ds = 0 v , v gs = 25 v 100 na z ero gate voltage drain current i dss v ds = - 30 v , v gs = 0 v - 1 a v ds = - 30 v , v gs = 0 v, t j = 55 c - 5 on-state drain current a i d(on ) v ds t - 10 v , v gs = - 10 v - 30 a drain-source on-state resistance a r ds(o n ) v gs = - 10 v , i d = - 10 a 0.035 0.043 : v gs = - 4.5 v , i d = - 7 a 0.055 0 .070 f orward transconductance a g fs v ds = - 10 v , i d = - 10 a 23 s dynam i c b input capacita n ce c iss v ds = - 15 v, v gs = 0 v, f = 1 mhz 196 0 pf output capacitance c oss 380 rev erse t ransfer capacitance c rs s 325 t o tal gate charge q g v ds = - 15 v , v gs = - 10 v , i d = - 10 a 43 65 nc v ds = - 15 v , v gs = - 4 .5 v, i d = - 10 a 22 33 gate-source charge q gs 6 gate-dr a in charge q gd 11 ga te re sistance r g f = 1 mhz 0.3 1.3 2.5 : tu r n - o n d e l ay t i m e t d(o n) v dd = - 15 v, r l = 3 : i d # - 5 a, v gen = - 10 v , r g = 1 : 11 22 ns rise time t r 13 25 t ur n-off delaytime t d(off) 32 50 fa l l time t f 918 tu r n - o n d e l ay t i m e t d( on) v dd = - 15 v, r l = 3 : i d # - 5 a, v gen = - 4.5 v , r g = 1 : 44 70 rise time t r 100 160 t ur n-off delaytime t d( off) 28 50 fa l l time t f 15 30 drain- so urce body diode characteristics continous source-drain diode current i s t c = 25 c - 16 a pulse diode forward current i sm - 50 body diode vo ltage v sd i s = - 2 a, v gs = 0 v - 0 .75 - 1.2 v body diode reverse recovery time t rr i f = - 2 a, di/dt = 100 a/s, t j = 25 c 28 45 ns body diode re verse recovery charge q rr 20 40 n c reverse recovery fall time t a 13 ns re verse recovery rise time t b 15 z z z g l q w h n m s ' 7 / 3
3 typica l c har acteristics 25 c, unless otherwise noted outp ut c haracteristics on-resistance vs. drain current gate charge 0 10 20 30 40 50 60 01234 5 v ds - drain - to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs =1 0t h r u 5 v v gs =3 v v gs =4 v 0 0.01 0.02 0.03 0.04 0.05 0 1 02 030405060 - on- r esistance ( ) r ds(on) i d - drain c u rrent (a) v gs =10 v v gs =4. 5 v 0 2 4 6 8 10 0 1 02 0304050 i d =10a - gate- t o-so u rce v oltage ( v ) q g - t otal gate charge (nc) v gs v ds =20 v v ds =10 v v ds =15 v transfer characteristics cap acitance on-resistance vs. junction temperature 0 1 2 3 4 5 01 2 3 45 v gs - gate -to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs = 125 c v gs =25 c v gs =- 5 5 c c rss 0 600 1200 1 8 00 2400 3000 0 6 12 1 8 24 30 c iss v ds - drain - to-so u rce v oltage ( v ) c - capacitance (pf) c oss 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 t j -j u nction t emperat u re (c) ( n ormalized) - on - r esistance r ds( on) v gs =- 10 v v gs = - 4.5 v i d =10a www.din-tek.jp dtl 15 p 03
4 ty pi cal ch aracteristics 25 c, unless otherwise noted source-d r ain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 v sd -so u rce - to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c - 0.4 - 0.2 0.0 0.2 0.4 0.6 0. 8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ariance ( v ) v gs(th) t j - t emperat u re (c) i d =5ma on-resistance vs. gate-to-source vol tage single pulse power, junction-to-ambient 0.00 0.02 0.04 0.06 0.0 8 0.10 024 6 8 10 - on- r esistance ( ) r ds(on) v gs - gate -to-so u rce v oltage ( v ) t j = 25 c t j = 125 c i d =10a 0 10 20 30 40 50 0.01 0.1 1 10 100 1000 time (s) po w er ( w ) saf e op erating area 0.01 100 1 100 0.01 - drain c u rrent (a) i d 0.1 v ds - drain - to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 1ms 10 ms 100 m s 0.1 1 10 10 t a = 25 c single p u lse limited b yr ds(on) * dc 1s 10 s www.din-tek.jp dtl 15 p 03
5 mosfe t t ypical characteristics 25 c, unless otherwise noted * t he po wer dissipation p d is based on t j(ma x ) = 175 c , using junction-to-case thermal resi stance, and is more useful in settling the upper dissip a tion limit for cases where additional h eatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. curr ent derating* 0 9 1 8 27 36 45 0 25 50 75 100 125 150 t c - case t emperat u re (c) package limited i d - drain c u rrent (a) pow e r, ju nction-to-case 0 13 26 39 52 65 0 25 50 75 100 125 150 t c - case t emperat u re (c) po w er ( w ) po we r d erating, junction-to-ambient 0.0 0.4 0. 8 1.2 1.6 2.0 0 25 50 75 100 125 150 t c - case t emperat u re (c) po w er ( w ) www.din-tek.jp dtl 15 p 03
6 ty pi cal ch aracteristics 25 c, unless otherwise noted normalized t h ermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 s qu are w a v ep u lse d u ration (s) n ormalized ef fecti v e transient thermal impedance 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =11 0 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rfa c e mo u nted d u ty c ycle = 0.5 0.02 no rmalized thermal transient impedance, junction-to-case 1 0.1 0.01 0.2 d u ty c ycle = 0.5 s qu are w a v ep u lse d u ration (s) n ormalized ef fecti v e transient thermal impedance single p u lse 0.1 10 -3 10 -2 1 10 -1 10 -4 0.02 0.05 www.din-tek.jp dtl 15 p 03
note: dimension l3 is for reference only. l2 b1 b b2 e l3 l1 l d c a1 c1 a e 1
dim min max min max a 2.21 2.38 0.087 0.094 a1 0.89 1.14 0.035 0.045 b 0.71 0.89 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.43 0.206 0.214 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 e 6.48 6.73 0.255 0.265 e 2.28 bs c 0.090 bsc l 8.89 9.53 0.350 0.375 l1 1.91 2.28 0.075 0.090 l2 0.89 1.27 0.035 0.050 l3 1.15 1.52 0.045 0.060 ecn: s-03946?rev. e, 09-jul-01 dwg: 5346 www. g d \ v h p l m s package information www.din-tek.jp
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